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| SMD Type NPN Transistors KMBT5551(MMBT5551) SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 High Voltage Transistors Pb-Free Packages are Available +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-continuous Collector Power Dissipation Junction and storage temperature Symbol VCBO VCEO VEBO IC Pc TJ, Tstg Rating 180 160 6 0.6 300 -55 to +150 Unit V V V A mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Symbol VCBO VCEO VEBO ICBO IEBO Testconditons IC = 100 iA, IE = 0 IC = 1.0 mA, IB = 0 IE = 10 iA, IC = 0 VCB = 120 V, IE = 0 VEB = 4.0 V, IC = 0 IC = 1.0 mA, VCE = 5 V DC current gain * hFE IC = 10 mA, VCE = 5 V IC = 50 mA, VCE = 5 V Collector-emitter saturation voltage * Base-emitter saturation voltage * Transiston frequency * Pulse Test: Pulse Width = 300 s, Duty Cycle=2.0%. VCE(sat) IC = 50 mA, IB = 5.0 mA VBE(sat) IC = 50 mA, IB = 5.0 mA fT VCE=10V,IC=10mA,f=100MHz 100 80 100 50 0.5 1.0 V V MHz 300 Min 180 160 6 50 50 Typ Max Unit V V V nA nA Marking Marking G1 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type KMBT5551(MMBT5551) Typical Characteristics Transistors Fig.1 Max Power Dissipation vs. Ambient Temperature Fig.2 Collector Emitter Saturation Voltage vs.Collector Current Fig.3 DC Current Gain vs. Collector Current Fig.4 Base Emitter Voltage vs.Collector Current Fig.5 Gain Bandwidth Product vs. Collector Current 2 www.kexin.com.cn |
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